HYR163240G Datasheet, PDF (12/14 Pages) Infineon Technologies AG – Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)

RIMM Module Current Profile
I_DD RIMM Module Capacity:
No. of 288 Mbit RDRAMs:
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Unit
RIMM Modules Power
Conditions^a)
I_DD1 One RDRAM in Read^b,
balance in NAP mode
I_DD2 One RDRAM in Read^b,
balance in Standby mode
I_DD3 One RDRAM in Read^b,
balance in Active mode
I_DD4 One RDRAM in Write,
balance in Active mode
I_DD5 One RDRAM in Write,
balance in Standby mode
I_DD6 One RDRAM in Write,
balance in Active mode
Freq. max. max. max. max.
-800
-711
-600
-800
-711
-600
-800
-711
-600
-800
-711
-600
-800
-711
-600
-800
-711
-600
932
863
794
1038
890
764
1107
827
946
932
863
794
1038
890
764
1107
827
946
940
876
812
1257
1090
974
1465
1361
1258
940
876
812
1257
1090
974
1465
1361
1258
956
887
818
1697
1593
1490
2181
2031
1882
956
887
818
1697
1593
1490
2181
2031
1882
988 mA
919 mA
850 mA
2575 mA
2433 mA
2290 mA
3613 mA
3372 mA
3130 mA
988 mA
919 mA
850 mA
2575 mA
2433 mA
2290 mA
3613 mA
3372 mA
3130 mA
a) Actual power will depend on individual memory controller and usage pattern. Power does not include Refresh
Current.
b) I/O power is a function of the percentage of 1’s, to add I/O power for 50% 1’s for a x 16 need to add 257mA or
290mA for x18 ECC module for the following: V_DD = 2.5V, V_TERM = 1.8V, V_REF = 1.4V and V_DIL = V_REF = 0.5V.
INFINEON Technologies
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