SPP21N50C3_07 Datasheet, PDF (8/14 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP21N50C3
SPI21N50C3, SPA21N50C3
13 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP21N50C3}
14 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
20
A
A
10 ¹
Tj(Start)=25°C
10
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
15 Avalanche energy
E_AS = f (T_j)
par.: I_D = 10 A, V_DD = 50 V
750
mJ
5
Tj(Start)=125°C
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
16 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP21N50C3
600
V
600
550
500
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
T_j
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20
20
60 100 °C
180
T_j
Rev. 3.0
Page 8
2007-08-30