SPP21N50C3_07 Datasheet, PDF (7/14 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP21N50C3
SPI21N50C3, SPA21N50C3
9 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
1.5
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 13.1 A, V_GS = 10 V
SPP21N50C3
1.1
Ω
Ω
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 20V
0.9
0.6
0.3
0 5 10 15 20 25 30 _A 40
I_D
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
70
A
Tj = 25°C
50
Tj = 150°C
40
30
20
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
98%
0.2
typ
0.1
0
-60 -20
20
60 100
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 21 A pulsed
SPP21N50C3
16
V
°C
180
T_j
12
10
0,2 V_{DS max}
0,8 V_{DS max}
8
6
4
2
0
0
2
4
6
V
10
V_GS
0
0
20 40 60 80 100 _nC 140
Q_Gate
Rev. 3.0
Page 7
2007-08-30