SGP20N60HS Datasheet, PDF (8/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology

SGP20N60HS
SGW20N60HS
15V
C_iss
1nF
120V
480V
10V
100pF
C_oss
C_rss
5V
0V _0nC
50nC
Q_GE, GATE CHARGE
Figure 17. Typical gate charge
(I_C=20 A)
100nC
10pF
0V
10V
20V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(V_GE=0V, f = 1 MHz)
15µs
10µs
5µs
0 µ s1 _{0 V}
11V
12V
13V
14V
V_GE, GATE-EMITETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V_CE=600V, start at T_J=25°C)
250A
200A
150A
100A
50A
0 A1 _{0 V}
12V
14V
16V
18V
V_GE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(V_CE ≤ 600V, T_j ≤ 150°C)
Power Semiconductors
8
Rev.2 Aug-02