SGP20N60HS Datasheet, PDF (3/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology

SGP20N60HS
SGW20N60HS
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
t_d(on)
T_j=25°C,
-
t_r
t_d(off)
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=16Ω
-
-
t_f
L_σ¹⁾ =60nH,
-
E_on
C_σ¹⁾ =40pF
Energy losses include
-
E_off
“tail” and diode
-
E_ts
reverse recovery.
-
Value
typ.
18
15
207
13
0.39
0.30
0.69
Unit
max.
ns
mJ
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
t_d(on)
T_j=150°C
-
t_r
t_d(off)
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 2.2Ω
-
-
t_f
L_σ¹⁾ =60nH,
-
E_on
C_σ¹⁾ =40pF
Energy losses include
-
E_off
“tail” and diode
-
E_ts
reverse recovery.
-
t_d(on)
T_j=150°C
-
t_r
t_d(off)
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 16Ω
-
-
t_f
L_σ¹⁾ =60nH,
-
E_on
C_σ¹⁾ =40pF
Energy losses include
-
E_off
“tail” and diode
-
E_ts
reverse recovery.
-
Value
typ.
15
8.5
65
35
0.46
0.24
0.7
17
13
222
13
0.6
0.36
0.96
Unit
max.
ns
mJ
ns
mJ
1) _{Leakage inductance L σ an d Stray capacity Cσ due to test circuit in Figure E.}
Power Semiconductors
3
Rev.2 Aug-02