SGP20N60HS Datasheet, PDF (2/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology

SGP20N60HS
SGW20N60HS
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
R_thJC
R_thJA
Conditions
TO-220AB
TO-247AC
Max. Value
Unit
0.7
K/W
62
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V_(BR)CES
V_CE(sat)
V_GE(th)
I_CES
I_GES
g_fs
V_GE=0V, I_C=500µA
V_GE = 15V, I_C=20A
T_j=25°C
T_j=150°C
I_C=500µA,V_CE=V_GE
V_CE=600V,V_GE=0V
T_j=25°C
T_j=150°C
V_CE=0V,V_GE=20V
V_CE=20V, I_C=20A
min.
600
3
-
-
-
-
Value
Typ.
-
2.8
3.5
4
-
-
-
14
Unit
max.
-V
3.15
4.00
5
µA
40
2500
100 nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
V_CE=25V,
V_GE=0V,
f=1MHz
-
1100
pF
-
105
-
64
Gate charge
Q_Gate
V_CC=480V, I_C=20A
-
100
nC
V_GE=15V
Internal emitter inductance
L_E
measured 5mm (0.197 in.) from case
TO-247AC
-
13
nH
Short circuit collector current¹⁾
I_C(SC)
V_GE=15V,t_SC≤10µs
-
170
A
V_CC ≤ 600V,
T_j ≤ 150°C
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
2
Rev.2 Aug-02