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| SGP04N60 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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SGP04N60, SGB04N60
SGD04N60, SGU04N60
25V
C iss
20V
15V
120V
480V
100pF
10V
Coss
5V
0V
0nC
10nC
20nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 4A)
30nC
10pF
Crss
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25µs
20µs
15µs
10µs
5µs
0µs
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
70A
60A
50A
40A
30A
20A
10A
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ⤠600V, Tj = 150°C)
8
Jul-02
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