SGP04N60 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP04N60, SGB04N60
SGD04N60, SGU04N60
0.6mJ
0.5mJ
*) Eon and Ets include losses
due to diode recovery.
0.4mJ
E _ts *
0.3mJ
0.2mJ
0.1mJ
E_on*
E_off
0.0mJ
0A
2A
4A
6A
8A 10A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, R_G = 67Ω,
Dynamic test circuit in Figure E)
0.4mJ
*) Eon and Ets include losses
due to diode recovery.
0.3mJ
E_ts*
0.2mJ
0.1mJ
E_off
E_on*
0.0mJ
0Ω
50Ω 100Ω 150Ω 200Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, I_C = 4A,
Dynamic test circuit in Figure E)
0.3mJ
*) Eon and Ets include losses
due to diode recovery.
0.2mJ
E_ts*
0.1mJ
E_on*
E _off
0.0mJ
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 400V, V_GE = 0/+15V,
I_C = 4A, R_G = 67Ω,
Dynamic test circuit in Figure E)
D=0.5
10⁰K/W
0.2
0.1
0.05
10^-1K/W _0.02
0.01
10^-2K/W
R,(K/W)
0.815
0.698
0.941
0.046
R1
τ, (s)
0.0407
5.24*10^-3
4.97*10^-4
4.31*10^-5
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10^-3K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
7
Jul-02