SGP04N60 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP04N60, SGB04N60
SGD04N60, SGU04N60
Fast IGBT in NPT-technology
• 75% lower E_off compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-251-3-1 (I-PAK)
(TO-251AA)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP04N60
SGB04N60
SGD04N60
SGU04N60
V_CE
I_C
V_CE(sat)
T_j
Package
Ordering Code
600V 4A
2.3V
150°C TO-220AB
Q67040-S4443
TO-263AB
Q67040-S4442
TO-252AA(DPAK) Q67041-A4708
TO-251AA(IPAK) Q67040-S4444
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
I_C = 4 A, V_CC = 50 V, R_GE = 25 Ω ,
start at T_j = 25°C
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
E_AS
t_SC
P_tot
T_j , T_stg
Value
Unit
600
V
A
9.4
4.9
19
19
±20
V
25
mJ
10
µs
50
W
-55...+150
°C
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
1
Jul-02