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PXFC192207NF Datasheet, PDF (8/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET
G
16.75
22.7±0.15 3.
0.5
7º
10º
Package Outline Specifications
PG-HBSOF-4-1_01.4_11-17-2014
0.5
3
VIEW Y
21.3
PXFC192207NF
0.5
R0.4
23.26
24.4
Diagram Notes–unless otherwise specified:
1. Mold protrusion of 0.30mm max per side not included
2. Dam Bar protrusion/ Metal protrusion shall not exceed 0.10mm max per side.
3. Metal protrusions are connected to source.
4.Interpret dimensions and tolerances per ISO 8015.
5. Dimensions are mm.
6. All tolerances ± 0.1mm unless specified otherwise.
7. Exposed metal surface pre-plated, may not be covered by mold compound.
8. Fillets and radii: all radii are 0.3 mm max.
9. All metal surfaces pre-plated, except area of cut.
10. Lead thickness: 0.25 mm.
11. Gold plating thickness: 0.25 micron [10 microinch] max.
12. Pins: D – drain; G – gate; S – source; V – VDD.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 02.1, 2014-11-18