PXFC192207NF Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXFC192207NF
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1600 mA, V_GS = 2.75 V,
ƒ = 1875 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-5
60
IMD Low
-15
IMD Up
50
ACPR
-25
Efficiency
40
-35
30
-45
20
-55
10
-65
29
b192207nf_g2
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1600 mA, V_GS = 2.75V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
1810 IMDL
1810 IMDU
-10
1842.5 IMDL
1842.5 IMDU
1880 IMDL
1880 IMDU
-20
-30
-40
-50
-60
29
b192207nf_g3
33 37 41 45 49 53
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 1600 mA
21
60
20
50
Gain
19
40
18
30
17
20
16 ^Efficiency
1810 MHz
1842.5 MHz
10
1880 MHz
15
b192207nf_g4
0
30
35
40
45
50
55
Output Power (dBm)
CW Performance at various V_DD
I_DQ = 1600 mA, ƒ = 1880 MHz
V_DD = 24 V
21
V_DD = 28 V
V_DD = 32 V
60
20
Gain
50
19
40
18
30
17
20
16
Efficiency
10
15
27
b192207nf_g5
0
32 37 42 47 52 57
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02.1, 2014-11-18