PXFC192207NF Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXFC192207NF
DC Characteristics
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V(_BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—

V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.03
Operating Gate Voltage
V_DS = 28 V, I_DQ = 1600 mA
V_GS
2.3
2.6
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
Max
—
1
10
—
2.9
1
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 200 W CW)
Symbol Value
V_DSS
V_GS
V_DD
T_J
T_STG
R_qJC
65
–6 to +10
0 to +32
225
–65 to +150
0.18
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXFC192207NF V1 R500
Order Code
PXFC192207NFV1R500XUMA1
Package Description
Shipping
PG-HBSOF-4-1, plastic package Tape & Reel, 500 pcs
Data Sheet
2 of 9
Rev. 02.1, 2014-11-18