PTAC260302FC Datasheet, PDF (8/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC260302FC
Package Outline Specifications
Package H-37248H-4
2X D 45° x .64
[.025]
(8.89
[.350])
(5.08
[.200])
D1
D2
4X 3.49±0.51
[.138±.020]
(16.76
CL
9.78
[.385]
[.660])

4X R0.51+-00.1.338
[^{R.020+-.0.00155} ]
3.76±0.25
[.148±.010]
1.57
[.062] SPH
G1
G2
CL
4X 3.81
[.150]
2X 12.70
[.500]
19.81±0.20
[.780±.008]
(1.02
[.040])
H-37248H-4_sl_01_12-03-2012
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
(Find the latest and most complete information about products and packaging at the Infineon Internet page
(http://www.infineon.com/rfpower)
Data Sheet
8 of 9
Rev. 04, 2016-06-21