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PTAC260302FC Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET
PTAC260302FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance (main)
(peak)
Operating Gate Voltage (main)
(peak)
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0 V
VGS = 10 V, VDS = 0.1 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 0.085 A
VDS = 28 V, IDQ = 0 A
Symbol
V(BR)DSS
IDSS
IDSS
IGSS
RDS(on)
RDS(on)
VGS
VGS
Min
65
—
—
—
—
—
2
0.4
Typ
—
—
—
—
0.8
0.6
2.7
1.1
Max
—
1
10
1
—
—
3.5
1.8
Unit
V
µA
µA
µA
W
W
V
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance
(main)
(peak)
(TCASE 70°C, 30 W CW)
(TCASE 70°C, 30 W CW)
Symbol Value
VDSS
VGS
TJ
TSTG
RqJC
RqJC
65
–6 to +10
225
–65 to +150
1.5
1.7
Unit
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version Order Code
Package and Description
PTAC260302FC V1 R0
PTAC260302FCV1R0XTMA1 H-37248H-4, Ceramic open-cavity, earless
PTAC260302FC V1 R250 PTAC260302FCV1R250XTMA1 H-37248H-4, Ceramic open-cavity, earless
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 04, 2016-06-21