PTAC260302FC Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAC260302FC
Pinout Diagram (top view)
Peak
D1
S
Main
D2
G1
G2
Lead connections for PTAC260302FC
Typical Performance (data taken in a production test fixture)
Pin
D1
D2
G1
G2
S (flange)
Description
Drain device 1 (peak)
Drain device 2 (main)
Gate device 1 (peak)
Gate device 2 (main)
Source
Single-carrier WCDMA Broadband
V_DD = 28 V, I_DQ = 85 mA, P_OUT = 37.5 dBm,
3GPP WCDMA signal, 10 dB PAR
19
47
18
Efficiency ⁴⁶
17
45
16 _Gain
44
15
43
14
42
13
41
12
2580
2620
2660
2700
c260302f c_gr5
40
2740
Frequency (MHz)
Single-carrier WCDMA Broadband
V_DD = 28 V, I_DQ = 85 mA, P_OUT = 37.5 dBm,
3GPP WCDMA signal, 10 dB PAR
-5
-5
-10
-10
-15
Return Loss -15
-20
-20
-25
-25
-30 ACP Up
-30
-35
-35
-40
2580
2620
2660
2700
c260302f c_gr6
-40
2740
Frequency (MHz)
Data Sheet
3 of 9
Rev. 04, 2016-06-21