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HYS64V32300GU Datasheet, PDF (8/16 Pages) Infineon Technologies AG – 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
HYS 64/72V32300GU
SDRAM-Modules
AC Characteristics (cont’d) 1), 2)
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns
Parameter
Symbol
Limit Values
Unit Note
-7
-7.5
-8
PC133-222 PC133-333 PC100-222
min. max min. max. min. max.
Refresh Cycle
Refresh Period (8192 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance
Data Out to High Impedance
DQM Data Out Disable Latency
Write Cycle
Data Input to Precharge
(write recovery)
DQM Write Mask Latency
tREF 64 –
–
64 –
64 ms 6)
tSREX –
1
1
–
1
–
CLK 8)
tOH
3
–
3
–
3
–
ns 2)
tLZ
0
–
0
–
0
–
ns –
tHZ
3
7
3
7
3
8
ns 9)
tDQZ –
2
–
2
–
2
CLK –
tWR
2
–
2
–
2
–
CLK –
tDQW 0
–
0
–
0
–
CLK –
INFINEON Technologies
8
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