HYS64V32300GU Datasheet, PDF (5/16 Pages) Infineon Technologies AG – 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules

HYS 64/72V32300GU
SDRAM-Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to V_SS
V_IN, V_OUT – 1.0
4.6
Power supply voltage on V_DD
V_DD
– 1.0
4.6
Storage temperature range
T_STG
-55
+150
Power dissipation per SDRAM component
P_D
–
1
Data out current (short circuit)
I_OS
–
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
o_C
W
mA
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V_DD = 3.3 V ± 0.3 V
Parameter
Input High Voltage
Input Low Voltage
Output High Voltage (I_OUT = – 4.0 mA)
Output Low Voltage (I_OUT = 4.0 mA)
Input Leakage Current, any input
(0 V < V_IN < 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < V_OUT < V_DD)
Symbol
Limit Values
min.
max.
V_IH
2.0
V_IL
– 0.5
V_OH
2.4
V_OL
–
I_I(L)
– 40
V_DD + 0.3
0.8
–
0.4
40
Unit
V
V
V
V
µA
I_O(L)
– 40
40
µA
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Input Capacitance
C_I1
(A0 to A11, BA0, BA1, RAS, CAS, WE)
Input Capacitance (CS0 - CS3)
C_I2
Input Capacitance (CLK0 - CLK3)
C_ICL
Input Capacitance (CKE0)
C_I3
Input Capacitance (DQMB0 - DQMB7)
C_I4
Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7) C_IO
Input Capacitance (SCL, SA0-2)
C_SC
Input/Output Capacitance
C_SD
Limit Values
max.
max.
32M x 64 32M x 72
65
72
32
40
38
40
65
72
13
16
10
10
8
8
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
pF
INFINEON Technologies
5
9.01