FP10R12W1T4 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12W1T4
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
V•Š = ±15 V, I† = 10 A, V†Š = 600 V
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ™ = f (t)
6,0
5,5
EÓÒ, TÝÎ = 125°C
EÓÒ, TÝÎ = 150°C
5,0
EÓËË, TÝÎ = 125°C
EÓËË, TÝÎ = 150°C
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0 _{0 50 100 150 200 250 300 350 400 450 500}
R• [Â]
10
ZÚÌœ™ : IGBT
1
0,10,001
i:
1
2
3
4
rÍ[K/W]: 0,209 0,443 0,982 0,766
τÍ[s]: 0,0005 0,005 0,05 0,2
0,01
0,1
1
10
t [s]
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
V•Š = ±15 V, R•ÓËË = 47 Â, TÝÎ = 150°C
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
22
I†, Modul
20
I†, Chip
18
16
14
12
10
8
6
4
20
TÝÎ = 25°C
18
TÝÎ = 125°C
TÝÎ = 150°C
16
14
12
10
8
6
4
2
2
0 _{0 200 400 600 800 1000 1200 1400}
V†Š [V]
00,0
0,5
1,0
1,5
2,0
2,5
VΠ[V]
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.1
8