FP10R12W1T4 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12W1T4
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
t« = 1 ms
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
Rückstromspitze
peak reverse recovery current
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Sperrverzögerungsladung
recovered charge
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode / per diode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Vorläufige Daten
preliminary data
Vçç¢
1200
V
IŒ
10
A
IŒç¢
20
A
I²t
16,0
A²s
14,0
A²s
min. typ. max.
1,75 2,25 V
VŒ
1,75
V
1,75
V
12,0
A
Iç¢
10,0
A
8,00
A
0,90
µC
QØ
1,70
µC
1,90
µC
0,24
mJ
EØþÊ
0,52
mJ
0,59
mJ
RÚÌœ†
1,75 1,90 K/W
RÚ̆™
1,30
K/W
Diode-Gleichrichter / diode-rectifier
Höchstzulässige Werte / maximum rated values
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Durchlassstrom Grenzeffektivwert pro Dio.
forward current RMS maximum per diode
T† = 80°C
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
T† = 80°C
Stoßstrom Grenzwert
surge forward current
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
Grenzlastintegral
I²t - value
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
TÝÎ = 150°C, IŒ = 10 A
Sperrstrom
reverse current
TÝÎ = 150°C, Vç = 1600 V
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
Vçç¢
1600
V
IŒç¢»¢
30
A
I碻¢
IŒ»¢
I²t
30
A
300
A
245
A
450
A²s
300
A²s
min. typ. max.
VŒ
0,80
V
Iç
1,00
mA
RÚÌœ†
1,20 1,35 K/W
RÚ̆™
1,15
K/W
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.1
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