FP10R12W1T4 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12W1T4
Vorläufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
V•Š = 15 V
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I† = f (V†Š)
TÝÎ = 150°C
20
TÝÎ = 25°C
18
TÝÎ = 125°C
TÝÎ = 150°C
16
14
12
10
8
6
4
2
00,0 _{0,5 1,0 1,5 2,0 2,5 3,0 3,5}
V†Š [V]
20
V•Š = 19V
18
V•Š = 17V
V•Š = 15V
16
V•Š = 13V
V•Š = 11V
V•Š = 9V
14
12
10
8
6
4
2
00,0 _{0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0}
V†Š [V]
Übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I† = f (V•Š)
V†Š = 20 V
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
EÓÒ = f (I†), EÓËË = f (I†)
V•Š = ±15 V, R•ÓÒ = 47 Â, R•ÓËË = 47 Â, V†Š = 600 V
20
TÝÎ = 25°C
18
TÝÎ = 125°C
TÝÎ = 150°C
16
14
12
10
8
6
4
2
0 _{5 6 7 8 9 10 11 12 13}
V•Š [V]
5,0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0 ₀
EÓÒ, TÝÎ = 125°C
EÓÒ, TÝÎ = 150°C
EÓËË, TÝÎ = 125°C
EÓËË, TÝÎ = 150°C
2 4 6 8 10 12 14 16 18 20
I† [A]
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.1
7