BFP640FESD Datasheet, PDF (8/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

2
Features
• Robust very low noise amplifier based on Infineon´s
reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.6 dB minimum noise figure typical at 1.5 GHz,
0.65 dB at 2.4 GHz, 6 mA
• 28.5 dB maximum gain G_ms typical at 1.5 GHz,
25 dB G_ms at 2.4 GHz, 30 mA
• 26 dBm OIP₃ typical at 2.4 GHz, 30 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP640FESD
Features
Applications
As Low Noise Amplifier (LNA) in
• Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
• Multimedia applications such as mobile / portable TV, CATV, FM radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP640FESD
Package
TSFP-4-1
1=B
Pin Configuration
2=E
3=C
4=E
Marking
T4s
Data Sheet
8
Revision 1.2, 2012-09-19