BFP640FESD Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640FESD
Electrical Characteristics
42
0.15GHz
39
36
0.45GHz
33
0.90GHz
30
1.50GHz
27
1.90GHz
24
2.40GHz
21
3.50GHz
18
15
5.50GHz
12
10.00GHz
9
6
3
0
0
10
20
30
40
50
60
I_C [mA]
Figure 5-11 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
42
0.15GHz
39
36
0.45GHz
33
0.90GHz
30
1.50GHz
27
1.90GHz
24
2.40GHz
21
3.50GHz
18
5.50GHz
15
12
10.00GHz
9
6
3
0
0
1
2
3
4
5
V_CE [V]
Figure 5-12 Maximum Power Gain G_max = f (V_CE), I_C = 30 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.2, 2012-09-19