BFP640FESD Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP640FESD
Electrical Characteristics
10 GHz
3
4
5
10
10 MHz
-0.2
-0.4
Step 1 GHz
Figure 5-13 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 30 mA
I_c = 6 mA
I_c = 30 mA
2.4 GHz
5.5 GHz
0.45 GHz
3
4
5
10
-0.2
10 GHz
-0.4
I_c = 6 mA
I_c = 30 mA
Figure 5-14 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 30 mA
Data Sheet
23
Revision 1.2, 2012-09-19