BFP450_13 Datasheet, PDF (8/28 Pages) Infineon Technologies AG – Linear Low Noise Silicon Bipolar RF Transistor

2
Features
• Highly linear low noise driver amplifier for all RF frontends up to
3 GHz
• Based on Infineon´s reliable high volume 25 GHz silicon bipolar
technology
• Output compression point OP_1dB = 19 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP3 = 31 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Maximum available gain G_ma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
• Minimum noise figure NF_min = 1.7 dB at 50 mA, 3 V, 1.9 GHz
• Pb-free (RoHS compliant) and halogen-free package with
visible leads
• Qualification report according to AEC-Q101 available
BFP450
Features
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4
2
1
Applications Examples
Driver amplifier
• ISM bands 434 and 868 MHz
• 1.9 GHz cordless phones
• CATV LNA
Transmitter driver amplifier
• 2.4 GHz WLAN and Bluetooth
Output stage LNA for active antennas
• TV, GPS, SDARS, 2.4 GHz WLAN, etc
Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP450
Datasheet
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
ANs
8
Revision 1.2, 2013-07-29