BFP450_13 Datasheet, PDF (14/28 Pages) Infineon Technologies AG – Linear Low Noise Silicon Bipolar RF Transistor

BFP450
Electrical Characteristics
Table 5-6 AC Characteristics, V_CE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ma
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP3 –
Values
Typ. Max.
18
–
18
–
14
–
14
–
1.65 –
17
–
19
–
31
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 50 mA
I_C = 90 mA
Z_S = Z_L = 50 Ω
I_C = 50 mA
I_C = 90 mA
Z_S = Z_opt
I_C = 50 mA
I_C = 50 mA
Z_S = Z_L = 50 Ω
I_C = 90 mA
I_C = 90 mA
Table 5-7 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ma
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
9.5
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP3 –
Values
Typ. Max.
15.5 –
15.5 –
11.5 –
11.5 –
1.7
–
14
–
19
–
31
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 50 mA
I_C = 90 mA
Z_S = Z_L = 50 Ω
I_C = 50 mA
I_C = 90 mA
Z_S = Z_opt
I_C = 50 mA
I_C = 50 mA
Z_S = Z_L = 50 Ω
I_C = 90 mA
I_C = 90 mA
Datasheet
14
Revision 1.2, 2013-07-29