BFP450_13 Datasheet, PDF (13/28 Pages) Infineon Technologies AG – Linear Low Noise Silicon Bipolar RF Transistor

BFP450
Electrical Characteristics
Table 5-4 AC Characteristics, V_CE = 3 V, f = 450 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ms
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP3 –
Values
Typ. Max.
28.5 –
29
–
25
–
25
–
1.55 –
27.5 –
19
–
30
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 50 mA
I_C = 90 mA
Z_S = Z_L = 50 Ω
I_C = 50 mA
I_C = 90 mA
Z_S = Z_opt
I_C = 50 mA
I_C = 50 mA
Z_S = Z_L = 50 Ω
I_C = 90 mA
I_C = 90 mA
Table 5-5 AC Characteristics, V_CE = 3 V, f = 900 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ms
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP3 –
Values
Typ. Max.
23
–
23.5 –
18.5 –
19
–
1.6
–
23
–
19
–
30.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 50 mA
I_C = 90 mA
Z_S = Z_L = 50 Ω
I_C = 50 mA
I_C = 90 mA
Z_S = Z_opt
I_C = 50 mA
I_C = 50 mA
Z_S = Z_L = 50 Ω
I_C = 90 mA
I_C = 90 mA
Datasheet
13
Revision 1.2, 2013-07-29