TLE94108EL Datasheet, PDF (70/76 Pages) Infineon Technologies AG – a protected eight-fold half-bridge driver designed especially for automotive motion control applications

TLE94108EL
Application Information
VBAT
VS
VBAT
Reverse battery
protection
100nF
V_S
VDDP
Embedded
Power IC
LIN
TLE984x
100 nF
VDD VS1 VS2
TLE94108EL
EN
OUT 4
SDO
SDI
CSN
SCLK
OUT 8
M x-adjustment
M ^y-adjustment
M
GND
VBAT
OUT 1
OUT 2
OUT 3
OUT 5
OUT 6
OUT 7
M _{Mirror fold}
Current < 2.4A
PROFET^TM
GND GND GND GND
Figure 28 Application example for side mirror control
Series resistors are
recommended if the VS1/2 of
the TLE94108 EL are
protected by an active
reverse polarity protection
Landing pads for ceramic
capacitors at OUTx
Notes on the application example
1. Series resistors between the microcontroller and the signal pins of the TLE94108EL are recommended if an
active reverse polarity protection (MOSFET) is used to protect VS1 and VS2 pins. These resistors limit the
current between the microcontroller and the device during negative transients on VBAT (e.g. ISO/TR 7637
pulse 1)
2. Landing pads for ceramic capacitors at the outputs of the TLE94108EL as close as possible to the connectors
are recommended (the ceramic capacitors are not populated if unused). These ceramic capacitors can be
mounted if a higher performance in term of ESD capability is required.
3. The electrolytic capacitor at the VSx pins should be dimensioned in order to prevent the VS voltage from
exceeding the absolute maximum rating. PWM operation with a too low capacitance can lead to a VS voltage
overshoot, which results in a VS overvoltage detection.
Data Sheet
70
1.0
2016-08-27