SPP03N60S5 Datasheet, PDF (7/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

9 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
3.5
A
2.5
T_j(START)=25°C
2
1.5 _{Tj(START)=125°C}
1
0.5
SPP03N60S5
SPB03N60S5
10 Avalanche energy
E_AS = f (T_j)
par.: I_D = 2.4 A, V_DD = 50 V
120
mJ
80
60
40
20
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
11 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP03N60S5
720
V
0
20 40 60 80 100 120 °C 160
T_j
12 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
680
10 ³
C_iss
660
640
10 ²
620
C_oss
600
10 ¹
580
560
C_rss
540
-60 -20
20
60 100 °C
180
T_j
10 ⁰
0
10 20 30 40 50 60 70 80 V 100
V_DS
Rev. 2.1
Page 7
2004-03-30