SPP03N60S5 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPP03N60S5
SPB03N60S5
Electrical Characteristics , at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Characteristics
Transconductance
g_fs
V_DS≥2*I_D*R_DS(on)max,
-
1.8
-S
I_D=2A
Input capacitance
C_iss
V_GS=0V, V_DS=25V,
- 420 - pF
Output capacitance
C_oss
f=1MHz
- 150 -
Reverse transfer capacitance C_rss
-
3.6
-
Turn-on delay time
t_d(on) V_DD=350V, V_GS=0/10V,
-
35
ns
Rise time
Turn-off delay time
Fall time
t_r
t _d(off)
t_f
I_D=3.2A, R_G=20Ω
-
25
-
-
40
-
15 22.5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q_gs
Q_gd
V_DD=350V, I_D=3.2A
Gate charge total
Q_g
V_DD=350V, I_D=3.2A,
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) V_DD=350V, I_D=3.2A
-
3.5
- nC
-
7
-
- 12.4 16
-
8
-V
1Repetitve _{avalanche causes additional power losses that can be calculated as PAV=EAR*f.}
2Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
3Soldering _{temperature for TO-263: 220°C, reflow}
Rev. 2.1
Page 3
2004-03-30