SPP03N60S5 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPP03N60S5
SPB03N60S5
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Inverse diode continuous
forward current
I_S
T_C=25°C
-
-
3.2 A
Inverse diode direct current,
I_SM
pulsed
-
-
5.7
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V_SD
t_rr
Q_rr
V_GS=0V, I_F=I_S
V_R=350V, I_F=I_S ,
di_F/dt=100A/µs
-
1
1.2 V
- 1000 1700 ns
-
2.3
- µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
Value
typ.
typ.
Thermal resistance
Thermal capacitance
R_th1
R_th2
R_th3
R_th4
R_th5
R_th6
0.054
0.103
0.178
0.757
0.682
0.202
K/W
C_th1
C_th2
C_th3
C_th4
C_th5
C_th6
0.00005232
0.0002034
0.0002963
0.0009103
0.002084
0.024
Unit
Ws/K
P_tot (t)
T_j R _th1
C _{th 1}
C _{th 2}
R_th,n T_case ^{External Heatsink}
C _{th ,n}
T_amb
Rev. 2.1
Page 4
2004-03-30