SPP02N60S5_09 Datasheet, PDF (7/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP02N60S5
9 Avalanche energy
E_AS = f (T_j)
par.: I_D = 1.35 A, V_DD = 50 V
50
mJ
30
20
10
0
20 40 60 80 100 120 °C 160
T_j
11 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
10 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP02N60S5
720
V
680
660
640
620
600
580
560
540
-60 -20
20
60 100 °C
180
T_j
10 ³
C_iss
10 ²
C_oss
10 ¹
C_rss
10 ⁰
0
10 20 30 40 50 60 70 80 _V 100
V_DS
Rev. 2.7
Page 7
2009-11-26