SPP02N60S5_09 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP02N60S5
1 Power dissipation
P_tot = f (T_C)
SPP02N60S5
28
W
24
22
20
18
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 °C 160
T_C
3 Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: t_p = 10 µs, V_GS
6
20V
A
12V
2 Safe operating area
I_D = f ( V_DS )
parameter : D = 0 , T_C=25°C
10 ¹
A
10 ⁰
10 ^-1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
-2
10
0
10 ¹
10 ²
V ^{10 3}
V_DS
4 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 1.1 A, V_GS = 10 V
SPP02N60S5
17
Ω
14
4
3
2
1
0
0
5
Rev. 2.7
12
10V
10
9V
8.5V
8V
7.5V
7V
6V
10
15
V
25
V_DS
Page 5
8
6
4
98%
typ
2
0
-60 -20 20
60 100 °C
180
T_j
2009-11-26