SPP02N60S5_09 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP02N60S5
Electrical Characteristics , at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Characteristics
Transconductance
g_fs
V_DS≥2*I_D*R_DS(on)max,
-
1.4
-S
I_D=1.1A
Input capacitance
C_iss
V_GS=0V, V_DS=25V,
- 240 - pF
Output capacitance
C_oss
f=1MHz
-
77
-
Reverse transfer capacitance C_rss
-
4.4
-
Turn-on delay time
t_d(on) V_DD=350V, V_GS=0/10V,
-
35
- ns
Rise time
Turn-off delay time
Fall time
t_r
t _d(off)
t_f
I_D=1.8A, R_G=50Ω
-
35
-
-
35 42
-
20 30
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q_gs
Q_gd
V_DD=350V, I_D=1.8A
Gate charge total
Q_g
V_DD=350V, I_D=1.8A,
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) V_DD=350V, I_D=1.8A
-
2.3
- nC
-
4.5
-
-
7.3 9.5
-
8
-V
1Repetitve _{avalanche causes additional power losses that can be calculated as PAV=EAR*f.}
2Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
3Soldering _{temperature for TO-263: 220°C, reflow}
Rev. 2.7
Page 3
2009-11-26