PXFC191507FC Datasheet, PDF (7/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXFC191507FC
Package Outline Specifications
D 45° x 0.64
[.025]
Package H-37248G-4/2
21.72
[.855]
4X 3.49±0.20
[.138±.008]
2X
50°
V
CL
D
V
3.00
[.118]
2X 2.29
[.090]
9.78
[.385]
CL
(16.76
CL
[.660])
4X R0.51+-00.1.338
[^{R.020+-.0.00155}]
3.76±0.25
[.148±.010]
SPH 1.57
[.062]
S
G
CL
2X 15.72
[.619]
19.81±0.20
[.780±.008]
H-37248G-4/2_sl_01_04-17-2013
20.57
[.810]
1.02
[.040]

Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – V_DD.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
7 of 8
Rev. 02, 2014-08-26