PXFC191507FC Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXFC191507FC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 960 mA, V_GS = 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-5
60
IMD Low
-15
IMD Up
50
ACPR
Efficiency
-25
40
-35
30
-45
20
-55
10
-65
29
c191507fc_g2
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 960 mA, V_GS = 2.65V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-10
1930 IMDL
1930 IMDU
1960 IMDL
-20
1960 IMDU
1990 IMDL
-30
-40
-50
-60
29
33 37 41 45
Output Power (dBm)
c191507fc_g3
49 53
22
21
20
19
18
17
16
30
Pulsed CW Performance
V_DD = 28 V, I_DQ = 960 mA
1930 Gain
1960 Gain
1990 Gain
1930 Eff
60
1960 Eff
1990 Eff
50
Gain
40
30
20
10
Efficiency
c191507fc_g4
0
35
40
45
50
55
Output Power (dBm)
Pulsed CW Performance
at various V_DD
I_DQ = 960 mA, ƒ = 1990 MHz
V_DD = 24 V Gain
22
V_DD = 28 V Gain
V_DD = 32 V Gain
60
V_DD = 24 V Eff
21
V_DD = 28 V Eff
V_DD = 32 V Eff
50
20
40
Gain
19
30
18
20
17
16
27
Efficiency
10
c191507fc_g5
0
32 37 42 47 52 57
Output Power (dBm)
Data Sheet
3 of 8
Rev. 02, 2014-08-26