PXFC191507FC Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXFC191507FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 1805 – 1990 MHz
Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 960 mA, V_GS = 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
22
BW 3.84 MHz
60
21
Gain
50
20
40
19
30
18
20
Efficiency
17
10
16
29
33 37 41 45
Output Power (dBm)
c191507fc_g1
0
49 53
PXFC191507FC
Package H-37248G-4/2
Features
• Broadband internal input and output matching
• Typical Pulsed CW performance, 1990 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB test
- Output power at P_1dB = 140 W
- Efficiency = 54%
- Gain = 19.5 dB
• Typical single-carrier WCDMA performance,
1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test
Model 1 with 16DPCH
- Output power = 32 W avg
- Efficiency = 34%
- Gain = 20 dB
- ACPR = –31 dBc@ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 150 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
V_DD = 28 V, I_DQ = 960 mA, P_OUT = 32 W avg, ƒ₁ = 1980 MHz, ƒ₂ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
19
20.5
h_D
29
31
IMD
—
–33
Max
—
—
–31
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02, 2014-08-26