PTFA192401E Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA192401E
PTFA192401F
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R8
2K V
R5
2K V
J1
C4
4.7µF
16V
R6
5.1K V
C5
C6
0.1µF 10pF
l7
C7
10pF
l1
l2
l3
DUT
l4
l5
l6
l8
C8
4.7µF
16V
R7
5.1K V
C9
C10
0.1µF 10pF
L1
C11 C12 C13
10pF 1µF 1µF
C14
2.2µF
l 11
VDD
C15
C16
C17
0.1µF
10µF
100µF
50V
50V
l 10
l9
C25
0.3pF
C28
0.7pF
C30
0.7pF
C33
10pF
l 14
l 15 l 16
l 17
l 18
l 19
l20
J2
l 12 C26
0.3pF
C27
0.5pF
C29
0.7pF
C31
0.7pF
C32
0.6pF
l 13
L2
C18
C19
C20 C21
10pF 1µF
1µF
2.2µF
C22
0.1µF
C23
10µF
50V
C24
100µF
50V
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT
PTFA192401E or PTFA192401F
PCB
0.76 mm [.030"] thick, RF35, εr = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
Microstrip
l1
l2
l3
l4
l5
l6
l7, l8
l9
l10, l12
l11, l13
l14, l15
l16
l17
l18
l19
l20
Electrical Characteristics at 1960 MHz
0.038 λ, 50.0 Ω
0.071 λ, 50.0 Ω
0.022 λ, 43.1 Ω
0.060 λ, 43.1 Ω / 6.9 Ω
0.040 λ, 6.9 Ω
0.026 λ, 6.9 Ω
0.123 λ, 59.9 Ω
0.010 λ, 5.0 Ω
0.027 λ, 51.0 Ω
0.228 λ, 51.0 Ω
0.028 λ, 5.0 Ω
0.011 λ, 5.0 Ω / 6.0 Ω
0.030 λ, 6.0 Ω / 12.3 Ω
0.019 λ, 12.3 Ω / 41.2 Ω
0.033 λ, 41.2 Ω
0.096 λ, 50.0 Ω
Dimensions: L x W ( mm)
3.51 x 1.70
6.60 x 1.70
2.01 x 2.16
5.28 x 2.16 / 20.32
3.33 x 20.32
2.21 x 20.32
11.48 x 1.24
0.84 x 28.91
2.54 x 1.65
21.03 x 1.65
2.36 x 28.91
0.89 x 28.91 / 23.65
2.54 x 23.65 / 10.67
1.78 x 10.67 / 2.29
3.05 x 2.29
8.99 x 1.70
Dimensions: L x W (in.)
0.138 x 0.067
0.260 x 0.067
0.079 x 0.085
0.208 x 0.085 / 0.800
0.131 x 0.800
0.087 x 0.800
0.452 x 0.049
0.033 x 1.138
0.100 x 0.065
0.828 x 0.065
0.093 x 1.138
0.035 x 1.138 / 0.931
0.100 x 0.931/ 0.420
0.070 x 0.420 / 0.090
0.120 x 0.090
0.354 x 0.067
Data Sheet
7 of 11
Rev. 02, 2009-04-01