PTFA192401E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz

PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA192401E V4
PTFA192401F V4
Package Type
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA192401E
PTFA192401F
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion Products v. Output Power
V_DD = 30 V, I_DQ = 1600 m A,
ƒ₁ = 1957.5 MHz, ƒ₂ = 1962.5 MHz
-20
Up
Low
-30
-40
IM3
IM5
-50
-60
10
IM7
100
Output Power, PEP (W)
1000
Broadband Performance
V_DD = 30 V, I_DQ = 1600 m A, P_OUT = 50 W
40
-5
Input Return Loss
35
-10
30
-15
25
-20
Efficiency
20
-25
15
Gain
10
1860 1890
1920 1950 1980
Frequency (MHz)
2010
-30
-35
2040
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 02, 2009-04-01