PTFA192401E Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
1900
1930
1960
1990
2020
G
S
Z Source Ω
R
jX
8.43
–8.22
8.00
–7.86
7.57
–7.51
7.19
–7.17
6.86
–6.77
Z Load Ω
R
jX
0.80
3.26
0.78
3.56
0.76
3.84
0.73
4.12
0.72
4.38
Data Sheet
6 of 11
PTFA192401E
PTFA192401F
Z Load
2020 MHz
1900 MHz
Z₀ = 50 Ω
Z Source
0.1
2020 MHz
1900 MHz
0. ²
Rev. 02, 2009-04-01