FP15R12W1T4_B11 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – IGBT-Wechselrichter / IGBT-inverter

Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T4_B11
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
V•Š = ±15 V, I† = 15 A, V†Š = 600 V
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ™ = f (t)
9,0
EÓÒ, TÝÎ = 125°C
8,0
EÓÒ, TÝÎ = 150°C
EÓËË, TÝÎ = 125°C
EÓËË, TÝÎ = 150°C
7,0
6,0
5,0
4,0
3,0
2,0
1,0
0,0 _{0 40 80 120 160 200 240 280 320 360 400}
R• [Â]
10
ZÚÌœ™ : IGBT
1
0,10,001
i:
1
2
3
4
rÍ[K/W]: 0,154 0,345 0,865 0,736
τÍ[s]: 0,0005 0,005 0,05 0,2
0,01
0,1
1
10
t [s]
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
V•Š = ±15 V, R•ÓËË = 39 Â, TÝÎ = 150°C
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
33
I†, Modul
30
I†, Chip
27
24
21
18
15
12
9
6
3
0 _{0 200 400 600 800 1000 1200 1400}
V†Š [V]
30
TÝÎ = 25°C
27
TÝÎ = 125°C
TÝÎ = 150°C
24
21
18
15
12
9
6
3
00,0 _{0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0}
VΠ[V]
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.0
7