FP15R12W1T4_B11 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – IGBT-Wechselrichter / IGBT-inverter

Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T4_B11
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tÔ = 1 ms
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
Rückstromspitze
peak reverse recovery current
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Sperrverzögerungsladung
recovered charge
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode / per diode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) /ðÃØþÈÙþ = 1 W/(m·K)
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Vorläufige Daten
preliminary data
Vçç¢
IŒ
IŒç¢
I²t
1200
V
10
A
20
A
16,0
A²s
min. typ. max.
1,75 2,25 V
VŒ
1,75
V
1,75
V
12,0
A
Iç¢
10,0
A
8,00
A
0,90
µC
QØ
1,70
µC
1,90
µC
0,24
mJ
EØþÊ
0,52
mJ
0,59
mJ
RÚÌœ†
1,75 1,90 K/W
RÚ̆™
1,30
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
T† = 25°C
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
Verlustleistung
power dissipation
T† = 25°C
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))]
B-Wert
B-value
Rè = Rèë exp [Bèëõîå(1/Tè - 1/(298,15 K))]
B-Wert
B-value
Rè = Rèë exp [Bèëõæåå(1/Tè - 1/(298,15 K))]
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
min. typ. max.
Rèë
5,00
kÂ
ÆR/R -5
5%
Pèë
20,0 mW
Bèëõëå
3375
K
Bèëõîå
3411
K
Bèëõæåå
3433
K
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.0
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