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BSN011NE2LSI Datasheet, PDF (7/9 Pages) Infineon Technologies AG – Optimized for high performance Buck converter
13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
25 °C
100 °C
125 °C
10
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
12
BSN011NE2LSI
12 V
10
5V
20 V
8
6
4
2
1
1
10
100
tAV [µs]
15 Typ. drain-source leakage current
I DSS=f(V DS ); V GS=0 V
parameter: T j
10-2
10-3
10-4
125 °C
100 °C
75 °C
10-5
25 °C
10-6
0
Rev. 2.0
5
10
15
VSD [V]
1000
0
0 10 20 30 40 50 60 70
Qgate [nC]
16 Gate charge waveforms
V GS
Qg
V gs(th)
Q g(th)
Q gs
20
page 7
Q sw
Q gd
Q gate
2014-05-23