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BSN011NE2LSI Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Optimized for high performance Buck converter
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
BSN011NE2LSI
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
3
2.5
2.5
2
1.5
1
typ
0.5
2
10 mA
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
Coss
103
-55 °C
102
125 °C 25 °C
150 °C
101
Crss
102
100
101
0
Rev. 2.0
5
10
15
20
25
VDS [V]
10-1
0
page 6
0.4
0.8
1.2
VSD [V]
2014-05-23
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