BSN011NE2LSI Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Optimized for high performance Buck converter

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=50 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
BSN011NE2LSI
Value
Unit
78
W
2.5
-55 ... 150
°C
55/150/56
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R _thJC
Device on PCB
R _thJA
bottom
top
6 cm² cooling area²⁾
Electrical characteristics, at T _j=25 °C, unless otherwise specified
min.
Values
typ.
Unit
max.
-
-
1.6 K/W
-
-
1
-
-
50
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=1 mA
25
-
-V
Breakdown voltage temperature
coefficient
dV _(BR)DSS I _D=10 mA, referenced
/dT _j
to 25 °C
-
15
- mV/K
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=250 µA
1.2
-
2V
Zero gate voltage drain current
I _DSS
V _DS=20 V, V _GS=0 V,
T _j=25 °C
-
-
0.5 mA
V _DS=20 V, V _GS=0 V,
T _j=125 °C
-
3
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
10
100 nA
Drain-source on-state resistance
R _DS(on) V _GS=4.5 V, I _D=30 A
-
1.2
1.5 mW
V _GS=10 V, I _D=30 A
-
0.9
1.1
Gate resistance
R_G
0.3
0.5
1.0 W
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=30 A
80
160
-S
3) _{See figure 3 for more detailed information}
Rev. 2.0
page 2
2014-05-23