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BSC019N02KSG Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
103
25 °C
102
100 °C
125 °C
101
14 Typ. gate charge
V GS=f(Q gate); I D=50 A pulsed
parameter: V DD
5
BSC019N02KS G
16 V
4
10 V
3
4V
2
1
100
100
101
102
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
24
22
0
103
0
20
40
60
80
Q gate [nC]
16 Gate charge waveforms
V GS
Qg
20
V g s(th)
18
Q g(th)
16
-60
-20
20
60
100
140
T j [°C]
Q gs
Rev. 1.41
page 7
Q sw
Q gd
Q gate
2010-07-01
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