BSC019N02KSG Datasheet, PDF (2/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P _tot
T _C=25 °C
T _A=25 °C,
R _thJA=45 K/W²⁾
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
BSC019N02KS G
Value
Unit
104
W
2.8
-55 ... 150
°C
55/150/56
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R _thJC bottom
top
SMD version, device on PCB
R _thJA
minimal footprint
6 cm² cooling area²⁾
Electrical characteristics, at T _j=25 °C, unless otherwise specified
min.
Values
typ.
Unit
max.
-
-
1.2 K/W
18
-
-
62
-
-
45
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V _(BR)DSS V _GS=0 V, I _D=1 mA
20
V _GS(th) V _DS=V _GS, I _D=350 µA
0.7
I _DSS
V _DS=20 V, V _GS=0 V,
T _j=25 °C
-
-
0.95
-
-V
1.2
1 µA
V _DS=20 V, V _GS=0 V,
T _j=125 °C
-
-
100
Gate-source leakage current
I _GSS
V _GS=12 V, V _DS=0 V
-
-
100 nA
Drain-source on-state resistance
R _DS(on) V _GS=2.5 V, I _D=50 A
-
2.3
3.0 mΩ
V _GS=4.5 V, I _D=50 A
-
1.6
1.95
Gate resistance
R_G
-
1.9
-Ω
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=50 A
100
210
-S
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3}
Rev. 1.41
page 2
2010-07-01