BSC019N02KSG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

OptiMOS™2 Power-Transistor
Features
• For fast switching converters and sync. rectification
• Qualified according to JEDEC¹⁾ for target applications
• Super Logic level 2.5V rated; N-channel
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC019N02KS G
Product Summary
V _DS
R _DS(on),max
I_D
20 V
1.95 mΩ
100 A
PG-TDSON-8
Type
BSC019N02KS G
Package
PG-TDSON-8
Marking
019N02KS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V, T _C=100 °C
V _GS=2.5 V, T _C=25 °C
V _GS=2.5 V, T _C=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) _{J-STD20 and JESD22}
Rev. 1.41
I _D,pulse
E _AS
dv /dt
V _GS
V _GS=4.5 V, T _A=25 °C,
R _thJA=45 K/W²⁾
T _C=25 °C³⁾
I _D=50 A, R _GS=25 Ω
I _D=50 A, V _DS=16 V,
di /dt =200 A/µs,
T _j,max=150 °C
page 1
Value
100
100
100
95
30
200
800
6
±12
Unit
A
mJ
kV/µs
V
2010-07-01