BFR92P Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

BFR92P
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
16
I_C=15mA
dB
12
0.9GHz
0.9GHz
1.8GHz
10
8
1.8GHz
6
4
2
00
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz1)
26
dBm
8V
5V
22
3V
20
18
2V
16
14
12
10
1V
8
60
4
8 12 16 20 ^mA 28
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
32
I_C=15mA
dB
V_CE = Parameter
28
dB
I_C=15mA
24
20
16
12
8
10V
4
1V
0.7V
00 _{0.5 1 1.5 2 2.5 GHz 3.5}
f
22
20
18
16
14
12
10
8
6
4
10V
2
1V
0
0.7V
-20 _{0.5 1 1.5 2 2.5 GHz 3.5}
f
7
Aug-03-2001