BFR92P Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

BFR92P
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 15 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
C_ce
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Noise figure
F
3.5 5
-
- 0.38 0.6
-
0.2
-
-
0.7
-
I_C = 2 mA, V_CE = 6 V, Z_S = Z_Sopt ,
f = 900 MHz
-
1.8
-
f = 1.8 GHz
-
2.9
-
Power gain, maximum available ^F)
I_C = 15 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
G_ma
-
15
-
f = 1.8 GHz
-
9.5
-
Transducer gain
I_C = 15 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
|S_21e|²
- 12.5 -
I_C = 15 mA, V_CE = 8 V
-
7
-
Unit
GHz
pF
dB
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Aug-03-2001