BFR92P Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

BFR92P
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 20 V, V_BE = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
Emitter-base cutoff current
V_EB = 2.5 V, I_C = 0
DC current gain
I_C = 15 mA, V_CE = 8 V
V_(BR)CEO 15
-
-
I_CES
-
-
10
I_CBO
-
- 100
I_EBO
-
- 100
h_FE
40 100 200
Unit
V
µA
nA
µA
-
2
Aug-03-2001